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research article

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Tang, Hongyu  
•
Anwar, Tarique  
•
Jang, Min Seok
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April 22, 2024
Advanced Science

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed results in ultrahigh responsivity and tunable photoconductance. Yet, optical potentiation and depression remain mostly modulated by gate bias, requiring relatively high energy inputs. Thus, advanced all-optical synapse switching strategies are still needed. In this work, a reversible switching between positive photoconductivity (PPC) and negative photoconductivity (NPC) is achieved in graphene/WSe2 vdWH solely through light-intensity modulation. Consequently, the graphene/WSe2 synaptic device shows tunable optical potentiation and depression behavior with an ultralow power consumption of 127 aJ. The study further unravels the complex interplay of gate bias and incident light power in determining the sign and magnitude of the photocurrent, showing the critical role of charge trapping and photogating at interfaces. Interestingly, it is found that switching between PPC to NPC can be also obtained at 0 mV drain-source voltage. Overall, the reversible potentiation/depression effect based on light intensity modulation and its combination with additional gate bias tunability is very appealing for the development of energy-efficient optical communications and neuromorphic computing.

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Type
research article
DOI
10.1002/advs.202309876
Web of Science ID

WOS:001206786500001

Author(s)
Tang, Hongyu  
•
Anwar, Tarique  
•
Jang, Min Seok
•
Tagliabue, Giulia  
Date Issued

2024-04-22

Publisher

Wiley

Published in
Advanced Science
Subjects

Physical Sciences

•

Technology

•

Graphene/Wse2 Van Der Waals Heterojunction

•

Optoelectronic Synapses

•

Photogating

•

Phototransistors

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LNET  
FunderGrant Number

Korean-Swiss Science and Technology Cooperation Fund

IZKSZ2_188341

Swiss National Science Foundation (SNSF) through the Korean-Swiss Science and Technology Cooperation Fund

2019K1A3A1A14064929

National Research Foundation of Korea (NRF) - Ministry of Science and ICT

Available on Infoscience
May 1, 2024
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/207756
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