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  4. Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band
 
conference paper

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Sirbu, A.  
•
Caliman, A.  
•
Mereuta, A.  
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2011
2011 13Th International Conference On Transparent Optical Networks (Icton)
13th International Conference on Transparent Optical Networks (ICTON)

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on the same wafer in a spectral range of 40 nm is demonstrated with these devices. This performance positions wafer-fused 1550 nm VCSELs as prime candidates for many applications in photonics, including air-space fiber-optic communications and WDM-PON as well as in spectroscopy and sensing.

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Type
conference paper
DOI
10.1109/ICTON.2011.5970822
Web of Science ID

WOS:000297859300059

Author(s)
Sirbu, A.  
Caliman, A.  
Mereuta, A.  
Iakovlev, V.  
Suruceanu, G.  
Kapon, E.  
Date Issued

2011

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2011 13Th International Conference On Transparent Optical Networks (Icton)
ISBN of the book

978-1-4577-0880-0

Subjects

Long-wavelength VCSELs

•

wafer fusion VCSEL technology

•

fibre-optic communication

•

optical sensors

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPN  
Event nameEvent placeEvent date
13th International Conference on Transparent Optical Networks (ICTON)

Stockholm, SWEDEN

Jun 26-30, 2011

Available on Infoscience
June 25, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/82221
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