Loading...
conference paper
Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band
2011
2011 13Th International Conference On Transparent Optical Networks (Icton)
Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on the same wafer in a spectral range of 40 nm is demonstrated with these devices. This performance positions wafer-fused 1550 nm VCSELs as prime candidates for many applications in photonics, including air-space fiber-optic communications and WDM-PON as well as in spectroscopy and sensing.
Type
conference paper
Web of Science ID
WOS:000297859300059
Authors
Publication date
2011
Published in
2011 13Th International Conference On Transparent Optical Networks (Icton)
ISBN of the book
978-1-4577-0880-0
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Stockholm, SWEDEN | Jun 26-30, 2011 | |
Available on Infoscience
June 25, 2012
Use this identifier to reference this record