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research article

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Albani, Marco
•
Ghisalberti, Lea  
•
Bergamaschini, Roberto
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September 17, 2018
Physical Review Materials

Nanoscale membranes have emerged as a new class of vertical nanostructures that enable the integration of horizontal networks of III-V nanowires on a chip. To generalize this method to the whole family of III-Vs, progress in the understanding of the membrane formation by selective area epitaxy in oxide slits is needed, in particular for different slit orientations. Here, it is demonstrated that the shape is primarily driven by the growth kinetics rather than determined by surface energy minimization as commonly occurs for faceted nanostructures. To this end, a phase-field model simulating the shape evolution during growth is devised, in agreement with the experimental findings for any slit orientations, even when the vertical membranes turn into multifaceted fins. This makes it possible to reverseengineer the facet-dependent incorporation times, which were so far unknown, even for common low-index facets. The compelling reproduction of the experimental morphologies demonstrates the reliability of the growth model and offers a general method to determine microscopic kinetic parameters governing out-of-equilibrium three-dimensional growth.

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Type
research article
DOI
10.1103/PhysRevMaterials.2.093404
Web of Science ID

WOS:000444783400002

Author(s)
Albani, Marco
•
Ghisalberti, Lea  
•
Bergamaschini, Roberto
•
Friedl, Martin  
•
Salvalaglio, Marco
•
Voigt, Axel
•
Montalenti, Francesco
•
Tutuncuoglu, Gozde  
•
Fontcuberta i Morral, Anna  
•
Miglio, Leo
Date Issued

2018-09-17

Publisher

AMER PHYSICAL SOC

Published in
Physical Review Materials
Volume

2

Issue

9

Article Number

093404

Subjects

Materials Science, Multidisciplinary

•

Materials Science

•

thin crystalline films

•

vapor-phase epitaxy

•

surface evolution

•

field model

•

equilibrium

•

nanowires

•

shapes

•

diffusion

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMSC  
Available on Infoscience
December 13, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/152412
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