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conference paper
3-D integrable optoelectronic devices for telecommunications ICs
2002
Proceedings of IEEE International Solid-State Circuits Conference (ISCC)
The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.
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2002_ISSCC_Optoelectronic.pdf
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