A Front-End Circuit in 28 nm CMOS for Hydrogenated Amorphous Silicon Detectors in Clinical Dosimetry
This paper presents the design and the characterization of a front-end circuit, designed in 28 nm CMOS, for real-time dosimetry in radiation diagnostics and radiation therapy. The front-end circuit is optimized for sensors made of hydrogenated amorphous silicon. The scheme is based on a current-to-frequency converter to sustain a large range of input currents. Three different programmable solutions have been investigated to be compatible with a wide variety of sensor sizes and applications. The front-end has been designed around three key specifications: an input capacitance between 1 pF and 50 pF, an input current from 100 pA to 2 µA, and a measurement time ranging from 400 µs to 60 ns. A first prototype has been fabricated and it is being characterized in laboratory.
2-s2.0-85202433088
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
École Polytechnique Fédérale de Lausanne
Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
University of Wollongong
Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
Istituto Nazionale di Fisica Nucleare - INFN
Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
INFN - Laboratori Nazionali del Sud
2024
9798350385427
REVIEWED
EPFL
| Event name | Event acronym | Event place | Event date |
Sofia, Bulgaria | 2024-06-26 - 2024-06-28 | ||