Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.
WOS:A1996VT73100040
1996
69
21
3233
3235
Infm,i-56126 pisa,italy. infm,lab nazl tasc,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,inst micro & optoelect,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy. Pellegrini, V, SCUOLA NORMALE SUPER PISA,PIAZZA CAVALIERI 7,I-56126 PISA,ITALY.
ISI Document Delivery No.: VT731
Cited Reference Count: 22
Cited References:
1994, P SOC PHOTO-OPT INS, V2346, P1
BARONI S, 1989, SPECTROSCOPY SEMICON, P251
BIASIOL G, 1992, PHYS REV LETT, V69, P1283
BONANNI A, 1995, APPL PHYS LETT, V66, P1092
BRILLSON LJ, 1992, HDB SEMICONDUCTORS, V1, P281
CAPASSO F, 1985, APPL PHYS LETT, V46, P664
COLAK S, 1989, SOLID STATE ELECTRON, V32, P647
FRANCIOSI A, 1996, SURF SCI REP, V214, P1
GUHA S, 1993, APPL PHYS LETT, V63, P3107
HARRISON WA, 1978, PHYS REV B, V18, P4402
LI D, 1990, APPL PHYS LETT, V57, P449
MARGARITONDO G, 1987, HETEROJUNCTION BAND, CH2
MAZURUK K, 1988, CAN J PHYS, V67, P339
MESHKOV SV, 1986, ZH EKSP TEOR FIZ, V64, P1337
NICOLINI R, 1994, PHYS REV LETT, V72, P294
OLEGO DJ, 1989, PHYS REV B, V39, P12743
PELLEGRINI V, 1995, PHYS REV B, V51, P5171
PELLEGRINI V, 1996, J APPL PHYS, V79, P929
QIAN QD, 1989, J VAC SCI TECHNOL B, V7, P793
RAISANEN AD, 1995, APPL PHYS LETT, V66, P3301
TU DW, 1985, J VAC SCI TECHNOL A, V3, P922
WRIGHT AC, 1991, J CRYST GROWTH, V114, P99
REVIEWED
EPFL