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  4. The mechanism of lifetime extension due to CuPc injection layer in organic light-emitting diodes
 
conference paper

The mechanism of lifetime extension due to CuPc injection layer in organic light-emitting diodes

Tutis, E.
•
Berner, D.  
•
Zuppiroli, L.  
2004
Organic Optoelectronics and Photonics

The remarkable effect on lifetime improvement of copper phthalocianine (CuPc) coated indium tin oxide (ITO) anode of organic light emitting diodes (OLED's) is experimentally well approved. Also known are the electrode morphology, with and without CuPc coating, the energy levels of the used materials, important for charge injection and conduction, the carrier mobility etc. Based on this knowledge we suggest the model that explains the mechanism behind the lifetime improvement. We argue that the charge accumulation at the interface between the CuPc and the hole transport layer is responsible for screening out of the electric field variations leading to current density homogenization across the OLED surface. The variation of the injection field, introduced by electrode roughness, is estimated for typical indium tin oxide morphology used in OLED production. Without the CuPc hole injection layer a substantial current channeling occurs in OLED's, leading to accelerated device degradation

  • Details
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Type
conference paper
DOI
10.1117/12.545788
Author(s)
Tutis, E.
Berner, D.  
Zuppiroli, L.  
Date Issued

2004

Publisher

SPIE-Int. Soc. Opt. Eng

Published in
Organic Optoelectronics and Photonics
Series title/Series vol.

Proceedings of the SPIE - The International Society for Optical Engineering

Start page

330

End page

336

Subjects

carrier lifetime

•

carrier mobility

•

charge injection

•

indium compounds

•

organic compounds

•

organic light emitting diodes

•

tin compounds

•

copper phthalocianine injection layer

•

organic light emitting diode

•

lifetime improvement

•

copper phthalocianine coated ITO anode

•

electrode morphology

•

carrier mobility

•

hole transport layer

•

electric field variation

•

current density homogenization

•

current channeling

•

accelerated device degradation

•

ITO roughness

•

ITO

•

InSnO

Note

Inst. of Phys., Zagreb, Croatia

8295702

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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Available on Infoscience
April 3, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/4250
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