Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology. Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to highimpedance superconducting quantum interference device array and Josephson-junction array resonators. We tune the strength of the electric-dipole interaction between the qubit and the resonator in situ using surface gates. We characterize the qubit-resonator coupling strength, the qubit decoherence, and the detuning noise affecting the charge qubit for different electrostatic DQD configurations. We find all quantities to be systematically tunable over more than one order of magnitude, resulting in reproducible decoherence rates ??2/2?? < 5 MHz in the limit of high interdot capacitance. In the opposite limit, by reducing the interdot capacitance, we increase the DQD electric-dipole strength and, therefore, its coupling to the resonator. Employing a Josephson-junction array resonator with an impedance of approximately 4 k?? and a resonance frequency of ??r/2?? ??? 5.6 GHz, we observe a coupling strength of g/2?? ??? 630 MHz, demonstrating the possibility to operate electrons hosted in a semiconductor DQD in the ultrastrong-coupling regime (USC). The presented results are essential for further increasing the coherence of quantum-dot-based qubits and investigating USC physics in semiconducting QDs.