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  4. Preparation and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin film
 
research article

Preparation and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin film

Kighelman, Z.  
•
Damjanovic, D.  
•
Seifert, A.  
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1999
Ferroelectrics

Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin layers on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Many parameters like homogeneity of the solution and appropriate processing must be controlled to minimize the pyrochlore formation. Optimization of the processing allowed highly (111)-oriented thin films to be obtained. Dielectric measurements and TEM investigations were performed and showed that PMN thin films exhibit relaxer behavior.

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Type
research article
DOI
10.1080/00150199908210579
Web of Science ID

WOS:000081792600038

Author(s)
Kighelman, Z.  
Damjanovic, D.  
Seifert, A.  
Sagalowicz, L.
Setter, N.  
Date Issued

1999

Published in
Ferroelectrics
Volume

224

Issue

1-4

Start page

719

End page

726

Subjects

pmn

•

thin films

•

crystallization

•

relaxor

•

chemical solution deposition

•

sol-gel method

•

dielectric-properties

•

microstructure

Note

Kighelman, Z Swiss Fed Inst Technol, EPFL, Ceram Lab, Dept Mat, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, EPFL, Ceram Lab, Dept Mat, CH-1015 Lausanne, Switzerland

222NX

Cited References Count:12

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233379
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