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  4. Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
 
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research article

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Bhandari, J.  
•
Vinet, M.
•
Poiroux, T.
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2008
Materials Science and Engineering: B

We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature range of 850-1050 °C. We have observed that sheet resistance (Rsh) obtained in SGOI for p-type is approximately independent of annealing conditions. In addition, these values are lower than the SOI (20 nm) reference. Result reveals that almost all BF2 atoms remain in SGOI substrate giving rise to low Rsh, whereas dopant out diffuses and segregates in SOI. In contrast, Rsh measured with arsenic and phosphorus implanted SGOI samples is higher than SOI.

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Type
research article
DOI
10.1016/j.mseb.2008.10.023
Web of Science ID

WOS:000262187600024

Author(s)
Bhandari, J.  
•
Vinet, M.
•
Poiroux, T.
•
Previtali, B.
•
Vincent, B.
•
Hutin, L.
•
Barnes, J. P.
•
Deleonibus, S.
•
Ionescu, A. M.  
Date Issued

2008

Published in
Materials Science and Engineering: B
Volume

154-155

Start page

114

End page

117

Subjects

Silicon germanium-on-insulator

•

Dopant activation

•

Sheet resistance

URL

URL

internal-pdf://Study of n- and p-type -0599013376/Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI).PDF
Peer reviewed

REVIEWED

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EPFL

EPFL units
NANOLAB  
Available on Infoscience
January 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/45146
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