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research article

Photoemission-induced gating of topological insulators

Kordyuk, A. A.
•
Kim, T. K.
•
Zabolotnyy, V. B.
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2011
Physical Review B

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu-intercalated Bi2Se3 shows that the surface-state occupancy in this material can be tuned by changing the photon energy and understood as a photoemission-induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests intercalation as a recipe for synthesis of a material suitable for electronic applications.

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Type
research article
DOI
10.1103/PhysRevB.83.081303
Web of Science ID

WOS:000287366800001

Author(s)
Kordyuk, A. A.
Kim, T. K.
Zabolotnyy, V. B.
Evtushinsky, D. V.
Bauch, M.
Hess, C.
Buechner, B.
Berger, H.
Borisenko, S. V.
Date Issued

2011

Published in
Physical Review B
Volume

83

Issue

8

Article Number

081303(R)

Subjects

Bi2Se3 Crystals

•

Surface

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ICMP  
Available on Infoscience
December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/74477
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