Atomic-Scale Simulation of Electrochemical Processes at Electrode/Water Interfaces under Referenced Bias Potential
Based on constant Fermi-level molecular dynamics and a proper alignment scheme, we perform simulations of the Pt(111)/water interface under variable bias potential referenced to the standard hydrogen electrode (SHE). Our scheme yields a potential of zero charge µ pzc of ∼ 0.22 eV relative to the SHE and a double layer capacitance C dl of ≃ 19 µFcm −2 , in excellent agreement with experimental measurements. In addition, we study the structural reorganization of the electrical double layer for bias potentials ranging from −0.92 eV to +0.44 eV and find that Odown configurations, which are dominant at potentials above the pzc, reorient to favor Hdown configurations as the measured potential becomes negative. Our modeling scheme allows one to not only access atomic-scale processes at metal/water interfaces, but also to quantitatively estimate macroscopic electrochemical quantities.
paper-Bouzid_2018.pdf
Main Document
Accepted version
openaccess
N/A
726.92 KB
Adobe PDF
7f58460c6482d6c6319b657f52b1bdc9
supp-Bouzid 2018.pdf
Supplementary Material/information
Accepted version
openaccess
N/A
1.49 MB
Adobe PDF
3b9e2aa3197f91034a8b02eebcd1e336