Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy
 
research article

Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy

Reddy, U. K.
•
Houdré, R.
•
Munns, G.
Show more
1987
Journal of Applied Physics
  • Details
  • Metrics
Type
research article
DOI
10.1063/1.339832
Author(s)
Reddy, U. K.
Houdré, R.
Munns, G.
Ji, G.
Morkoç, H.
Longerbone, M.
Davis, L.
Gu, B. P.
Otsuka, N.
Date Issued

1987

Published in
Journal of Applied Physics
Volume

62

Issue

12

Start page

4858

End page

4862

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
SCI-SB-RH  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/10969
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés