research article
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
Type
research article
Web of Science ID
WOS:000257337600007
Author(s)
Date Issued
2008
Published in
Volume
43
Issue
1
Start page
51
End page
53
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 5, 2010
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