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conference paper
Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
2016
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.
Type
conference paper
Web of Science ID
WOS:000391250500030
Authors
•
Lopez, Mariazel Maqueda
•
Vitale, Wolfgang A.
•
Fernandez-Bolanos, Montserrat
•
Publication date
2016
Publisher
Publisher place
New York
Published in
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
Total of pages
2
Start page
70
End page
71
Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Honolulu, HI, USA | 12-13 June 2016 | |
Available on Infoscience
October 14, 2016
Use this identifier to reference this record