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  4. Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te
 
research article

Effect of Surface Preparation on Ge Overlayer Growth on (Hgcd)Te

Davis, G. D.
•
Beck, W. A.
•
Kelly, M. K.
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1986
Applied Physics Letters
  • Details
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Type
research article
DOI
10.1063/1.97296
Author(s)
Davis, G. D.
Beck, W. A.
Kelly, M. K.
Mo, Y. W.
Margaritondo, G.  
Date Issued

1986

Published in
Applied Physics Letters
Volume

49

Issue

23

Start page

1611

End page

1613

Note

Univ wisconsin,dept phys,madison,wi 53706. Davis, gd, martin marietta corp labs,1450 s rolling rd,baltimore,md 21227.

ISI Document Delivery No.: F0875

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
LPRX  
Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234388
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