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conference paper
The self-interstitial in silicon and germanium
2009
Materials Science And Engineering B-Advanced Functional Solid-State Materials
Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved.
Type
conference paper
Web of Science ID
WOS:000267635500029
Author(s)
Jones, R.
•
Carvalho, A.
•
Goss, J. P.
•
Briddon, P. R.
Date Issued
2009
Published in
Materials Science And Engineering B-Advanced Functional Solid-State Materials
Volume
159-60
Start page
112
End page
116
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Strasbourg, FRANCE | May 26-30, 2008 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record