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  4. 3.3 A 0.51nW 32kHz Crystal Oscillator Achieving 2ppb Allan Deviation Floor Using High-Energy-to-Noise-Ratio Pulse Injection
 
conference paper

3.3 A 0.51nW 32kHz Crystal Oscillator Achieving 2ppb Allan Deviation Floor Using High-Energy-to-Noise-Ratio Pulse Injection

Xu, Li
•
Jang, Taekwang
•
Lim, Jongyup
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2019
2020 IEEE International Solid- State Circuits Conference proceedings
IEEE International Solid- State Circuits Conference - (ISSCC)

In this work, we propose an X0 design with frequency -divided (4kHz), high energy-to-noise-ratio pulse-injection oscillation (HERO). The performance of the X0 is compared with state-of-the-art X0s in Fig. 3.3.6. By allowing the crystal to run freely for a longer time between injections, HERO achieves a 2ppb Allan deviation floor, which is 5x lower than the deviation floors among the state-ofthe-art nW X0s. Furthermore, the less-frequent injections significantly reduce the injection overhead, enabling lowest-reported power consumption (0.51nW) among prior -art oscillators shown in Fig. 3.3.6. An integrated phase extraction and delay circuit obtains accurate injection alignment, resulting in stable operation from -25°C to 125°C, the widest reported range among the nW X0s shown in the comparison table.

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Type
conference paper
DOI
10.1109/ISSCC19947.2020.9062906
Author(s)
Xu, Li
Jang, Taekwang
Lim, Jongyup
Choo, Kyojin  
Blaauw, David
Sylvester, Dennis
Date Issued

2019

Publisher

IEEE

Published in
2020 IEEE International Solid- State Circuits Conference proceedings
Start page

62

End page

64

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
MSIC-LAB  
Event nameEvent placeEvent date
IEEE International Solid- State Circuits Conference - (ISSCC)

San Francisco, CA, USA

16-20 Feb. 2020

Available on Infoscience
April 1, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/186839
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