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research article
Simulation of some quantum models for semiconductors
Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.
Type
research article
Web of Science ID
WOS:000177961800001
Authors
Publication date
2002
Volume
12
Issue
8
Start page
1049
End page
1074
Note
Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland. Caussignac, P, Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 592XH
Cited Reference Count: 31
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
August 24, 2006
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