research article
High performance solar blind detectors based on AlGaN grown by MBE on Si
Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Some devices were fabricated by electron beam lithography, We present the device characterization and performance, that includes a noise equivalent power as low as 30 fW at 280 nm.
Type
research article
Author(s)
Date Issued
2001
Published in
Volume
188
Issue
1
Start page
325
End page
328
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
October 5, 2010
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