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  4. Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements
 
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research article

Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

Stokker-Cheregi, F.
•
Vinattieri, A.
•
Feltin, E.
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2008
Physical Review B

We report on the experimental achievement of narrow ultraviolet excitonic and biexcitonic emission from GaN/AlGaN quantum wells. The very large biexciton binding energy (up to 12 meV) inhibits thermalization between the two species allowing to study the recombination kinetics of the biexciton gas. By performing resonant and nonresonant time resolved measurements, we elucidate the interplay between biexciton formation and exciton acoustic-phonon mediated relaxation within localized states.

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Type
research article
DOI
10.1103/PhysRevB.77.125342
Web of Science ID

WOS:000254543000114

Author(s)
Stokker-Cheregi, F.
•
Vinattieri, A.
•
Feltin, E.
•
Simeonov, D.
•
Carlin, J. F.  
•
Butte, R.  
•
Grandjean, N.  
•
Gurioli, M.
Date Issued

2008

Published in
Physical Review B
Volume

77

Issue

12

Article Number

5342

Subjects

SEMICONDUCTORS

•

EMISSION

•

EXCITONS

•

LUMINESCENCE

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55133
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