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  4. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures
 
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research article

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Lugani, L.  
•
Carlin, J-F  
•
Py, M. A.
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2014
Applied Physics Letters

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties. (c) 2014 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4895807
Web of Science ID

WOS:000342995800036

Author(s)
Lugani, L.  
•
Carlin, J-F  
•
Py, M. A.
•
Grandjean, N.  
Date Issued

2014

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

105

Issue

11

Article Number

112101

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
November 13, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/108698
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