research article
Laser-Initiated Metal-Deposition on Gaas Substrates
Rytz-Froidevaux, Y.
•
Salathe, R. P.
•
Gilgen, H. H.
1981
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1200°C. The smallest size of the deposits was ≈4 μm
Type
research article
Author(s)
Rytz-Froidevaux, Y.
Salathe, R. P.
Gilgen, H. H.
Date Issued
1981
Published in
Volume
84
Issue
4
Start page
216
End page
218
Note
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland Copyright 1981, IEE 1757166 0375-9601 GaAs substrates thermal dissociation trimethylaluminium dimethylzinc dimethylcadmium amorphous crystalline structures Cd laser initiated metal deposition Al Zn CVD
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
January 20, 2009
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