Electrolummescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires
We have studied systems of asymmetric coupled GaAs V-groove quantum wires, in which the electrons and holes are injected into different wires. Our experimental results indicate efficient electron and hole tunneling, despite a 7 nm thick AlGaAs tunnel barrier. Temperature dependent electroluminescence exhibit clear effects of tunneling up to room temperature but cannot distinguish electron/hole tunneling from exciton tunneling.
WOS:000222970500043
2003
183
186
Institute of Physics Conference Series
Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, Linkoping, Sweden. Karlsson, KF, Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: BAN50
Cited Reference Count: 7
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