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  4. Optical study of extended-molecular-layer flat islands in lattice-matched InO.53 GaO.47 As/InP and InO.53GaO.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
 
research article

Optical study of extended-molecular-layer flat islands in lattice-matched InO.53 GaO.47 As/InP and InO.53GaO.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles

Sauer, R
•
Nilsson, S
•
Roentgen, P
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1992
Physical Review B
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Type
research article
DOI
10.1103/PhysRevB.46.9525
Author(s)
Sauer, R
Nilsson, S
Roentgen, P
Heuberger, W
Graf, V
Hangleiter, A
Spycher, R
Date Issued

1992

Published in
Physical Review B
Volume

46

Issue

15

Start page

9525

End page

9537

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CIME  
Available on Infoscience
February 15, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/2750
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