conference paper
Structural, optical, and electrical properties of silicon nanowires for solar cells
2010
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed. ©2010 IEEE.
Type
conference paper
Author(s)
Stelzner, T.
Sivakov, V. A.
Berger, A.
Hoffmann, B.
Zhang, D.
Michler, J.
Christiansen, S. H.
Date Issued
2010
Publisher place
Hong Kong
Published in
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Start page
275
End page
276
Note
IMT-NE Number: 562
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
May 25, 2010
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