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research article

Diffusion of electron-hole pairs in disordered quantum wires

Moret, N.  
•
Oberli, D. Y.  
•
Dwir, B.  
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2008
Applied Physics Letters

The diffusivity of photogenerated electron-hole pairs in weakly disordered GaAs/AlGaAs V-groove quantum wires was measured using a photoluminescence (PL) time-of-flight technique. It is shown that the electron-hole pair diffusion is thermally activated above about 50 K. Exciton localization is observed in micro-PL (mu PL) spectra at low temperature. A reduction in the Stokes shift is found to accompany the increase in the diffusion coefficient. Nevertheless, localization-related features in the mu PL spectra disappear at intermediate temperatures, before measurable diffusion occurs.

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Type
research article
DOI
10.1063/1.2970987
Web of Science ID

WOS:000260944100043

Author(s)
Moret, N.  
Oberli, D. Y.  
Dwir, B.  
Rudra, A.  
Kapon, E.  
Date Issued

2008

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

93

Article Number

192101

Subjects

aluminium compounds

•

diffusion

•

excitons

•

gallium arsenide

•

III-V semiconductors

•

photoluminescence

•

semiconductor quantum wires

•

time of flight spectra

•

Semiconductor Nanostructures

•

Excitons

•

Mobility

•

Wells

•

Thermalization

•

Dependence

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LPN  
Available on Infoscience
March 26, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/48882
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