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  4. Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O-3 (PZT) thin films
 
research article

Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O-3 (PZT) thin films

Hiboux, S.
•
Muralt, P.  
1999
Ferroelectrics

Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the bottom electrode/PZT initial interlayer deposition conditions. Series of 300 nm thick films with varying composition x have been prepared. The Ti and Zr ratio was changed by adjusting the powers of the corresponding targets. The lead content was self stabilized by the process at the deposition temperature of 570 degrees C. Polarization, dielectric and piezoelectric properties were studied. Coercive field, built-in electric field and unswitchable polarization for Ti-rich compositions have been determined by polarisation hysteresis loops.

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Type
research article
DOI
10.1080/00150199908210582
Web of Science ID

WOS:000081792600041

Author(s)
Hiboux, S.
Muralt, P.  
Date Issued

1999

Published in
Ferroelectrics
Volume

224

Issue

1-4

Start page

743

End page

750

Subjects

pzt

•

thin films

•

magnetron sputtering

•

electrode

•

texture

•

composition

•

properties

Note

Hiboux, S EPFL, Dept Mat, Lab Ceram, CH-1015 Lausanne, Switzerland EPFL, Dept Mat, Lab Ceram, CH-1015 Lausanne, Switzerland

222NX

Cited References Count:4

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233375
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