conference paper
High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs
2009
Aoe 2008: Asia Optical Fiber Communication And Optoelectronic Exposition And Conference
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80 degrees C for both 1310 nm and 1550 nm devices is demonstrated for the first time. (C)2008 Optical Society of America
Type
conference paper
Web of Science ID
WOS:000296471700094
Date Issued
2009
Published in
Aoe 2008: Asia Optical Fiber Communication And Optoelectronic Exposition And Conference
ISBN of the book
978-1-55752-863-6
Subjects
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Shanghai, PEOPLES R CHINA | Oct 30-Nov 02, 2008 | |
Available on Infoscience
December 16, 2011
Use this identifier to reference this record