Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Growth and Transformation of InAs/InP Ultra-Thin Layers Obtained by Chemical Beam Epitaxy
 
research article

Growth and Transformation of InAs/InP Ultra-Thin Layers Obtained by Chemical Beam Epitaxy

Lebouché-Girard, N.
•
Rudra, A.  
•
Kapon, E.  
1997
Journal of Crystal Growth
  • Details
  • Metrics
Type
research article
DOI
10.1016/S0022-0248(96)00955-4
Web of Science ID

WOS:A1997XX17900093

Author(s)
Lebouché-Girard, N.
Rudra, A.  
Kapon, E.  
Date Issued

1997

Published in
Journal of Crystal Growth
Volume

175/176

Start page

1210

End page

1216

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPN  
Available on Infoscience
February 29, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/19594
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés