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  4. Novel 2-D Materials for Tunneling FETs: an Ab-initio Study
 
conference paper

Novel 2-D Materials for Tunneling FETs: an Ab-initio Study

Klinkert, C.
•
Szabo, A.
•
Campi, D.  
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January 1, 2018
2018 76Th Device Research Conference (Drc)
76th Device Research Conference (DRC)
  • Details
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Type
conference paper
DOI
10.1109/DRC.2018.8442268
Web of Science ID

WOS:000444728400103

Author(s)
Klinkert, C.
Szabo, A.
Campi, D.  
Stieger, C.
Marzari, N.  
Luisier, M.
Date Issued

2018-01-01

Publisher

IEEE

Publisher place

New York

Published in
2018 76Th Device Research Conference (Drc)
ISBN of the book

978-1-5386-3028-0

Series title/Series vol.

IEEE Device Research Conference Proceedings

Subjects

Engineering, Electrical & Electronic

•

Engineering

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
THEOS  
Event nameEvent placeEvent date
76th Device Research Conference (DRC)

Santa Barbara, CA

Jun 24-27, 2018

Available on Infoscience
December 13, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/152516
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