Micro-Electromechanical Systems (MEMS) are underway to play a larger role in quantum information, serving as quantum memories or transducers to measure and interconnect diverse quantum systems. The current engineering endeavors aim at improving these cutting edge devices to ensure large qubit coherence times and a decent degree of robustness. This work aims at upgrading the piezo-electric and superconductor materials currently at play to increase the piezo-electric response with the hope of ultimately increasing the current mechanical 10μs coherence time. We investigate the benefits on the micro-structure of sputtering of Al1−xScxN (x = 0, 0.17, 0.40) on Titanium Nitride instead of Aluminum. Additionally, we successfully undertook the fabrication and testing of a prototype HBAR device with Al −Al0.6Sc0.4N −TiN layers on a Sapphire Substrate. Greyscale lithography of thin elliptical contacts is rapidly addressed.