In this work, we investigate how an array of isolated gate electrodes influences the formation and electrostatic behavior of double quantum dots at the silicon/silicon dioxide interface in a metal-oxide-semiconductor (MOS) structure. We propose a modeling approach that predicts the formation of two coupled quantum dots by applying a combination of positive and negative voltages to the gates. Using a two-dimensional self-consistent solution of the Poisson and Schr & ouml;dinger equations, we compute the surface potential and charge distribution, obtaining results consistent with those in Schmidt A et al (2014 J. Appl. Phys. 116 044503). We further examine the effect of gate voltage variations on the charge stability diagram, demonstrating the sensitivity of dot size and charge density to small voltage changes. The capacitance matrix is extracted, and the resulting electrostatic energy calculations provide insights into the system's charge transport behavior, as reflected in the charge stability diagram. Our findings highlight the strong sensitivity of silicon-based spin qubits to gate voltages and reinforce the suitability of silicon MOS platforms for quantum computing applications, owing to their compatibility with standard CMOS fabrication technologies.