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  4. Crossover between extrinsic and intrinsic dielectric loss mechanisms in SrTiO3 thin films at microwave frequencies
 
research article

Crossover between extrinsic and intrinsic dielectric loss mechanisms in SrTiO3 thin films at microwave frequencies

Astafiev, K. F.
•
Sherman, V. O.
•
Tagantsev, A. K.  
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2004
Applied Physics Letters

The do bias field. dependence of the dielectric loss in SrTi03 thin films deposited onto MgO substrate is investigated. The experimental data obtained at different frequencies of the ac field (8 and 16 GHz) from differently processed films (as deposited and oxygen annealed) strongly suggest the occurrence of a crossover in the dominant loss mechanism. The crossover is driven by the do bias field: at weak fields the loss is governed by an extrinsic mechanism(s) whereas, at higher fields, the contribution of an intrinsic mechanism (dc field-induced quasi-Debye loss) becomes predominant. (C) 2004 American Institute of Physics.

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Type
research article
DOI
10.1063/1.1690878
Web of Science ID

WOS:000220591500055

Author(s)
Astafiev, K. F.
Sherman, V. O.
Tagantsev, A. K.  
Setter, N.  
Kaydanova, T.
Ginley, D. S.
Date Issued

2004

Published in
Applied Physics Letters
Volume

84

Issue

13

Start page

2385

End page

2387

Subjects

planar capacitor

•

ferroelectrics

•

devices

•

bulk

•

temperature

Note

Astafiev, KF Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland Natl Renewable Energy Lab, Golden, CO 80401 USA

808TN

Cited References Count:15

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233520
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