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  4. Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells
 
research article

Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells

Pasquarello, Alfredo  orcid-logo
•
Bastard, G.
1991
Europhysics Letters - European Physical Society Letters (EPL)

Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike states and states which are essentially confined in the well. The effects of an electric field are also discussed.

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Type
research article
DOI
10.1209/0295-5075/15/4/014
Web of Science ID

WOS:A1991FR28300014

Author(s)
Pasquarello, Alfredo  orcid-logo
Bastard, G.
Date Issued

1991

Publisher

IOP Publishing - EPL Association

Published in
Europhysics Letters - European Physical Society Letters (EPL)
Volume

15

Issue

4

Start page

447

End page

451

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Available on Infoscience
October 8, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43345
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