research article
Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells
Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike states and states which are essentially confined in the well. The effects of an electric field are also discussed.
Type
research article
Web of Science ID
WOS:A1991FR28300014
Author(s)
Bastard, G.
Date Issued
1991
Publisher
Volume
15
Issue
4
Start page
447
End page
451
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 8, 2009
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