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research article

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Dubrovskii, Vladimir G.
•
Steinvall, Simon Escobar  
•
de Mestral, Virginie
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August 4, 2021
Crystal Growth & Design

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing a peculiar shape transformation in the course of growth. We present a model based on the minimization of the surface energy with respect to the relevant geometrical parameters which quantitively describes the shape of nanoislands depending on their volume. The results are presented in the dimensionless variables which allow us to comprehend simultaneously the islands grown in differently sized pinholes and for different growth times. The shape transformation is driven by a competition of (112) and (101) side facets and (001) top facet. The islands are flat and regular octagonal at the beginning of growth, transitioning to the full nanopyramid restricted solely by (101) facets at the end.

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Type
research article
DOI
10.1021/acs.cgd.1c00569
Web of Science ID

WOS:000683720700051

Author(s)
Dubrovskii, Vladimir G.
•
Steinvall, Simon Escobar  
•
de Mestral, Virginie
•
Paul, Rajrupa  
•
Leran, Jean-Baptiste  
•
Zamani, Mahdi  
•
Stutz, Elias Z.
•
Morral, Anna Fontcuberta, I  
Date Issued

2021-08-04

Publisher

AMER CHEMICAL SOC

Published in
Crystal Growth & Design
Volume

21

Issue

8

Start page

4732

End page

4737

Subjects

Chemistry, Multidisciplinary

•

Crystallography

•

Materials Science, Multidisciplinary

•

Chemistry

•

Crystallography

•

Materials Science

•

molecular-beam epitaxy

•

single-crystalline

•

nanostructures

•

nanowires

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMSC  
Available on Infoscience
August 28, 2021
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/180870
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