conference paper
Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
2016
2016 International Semiconductor Laser Conference (Islc)
We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.
Type
conference paper
Web of Science ID
WOS:000392249800024
Author(s)
Jagsch, Stefan Thomas
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Kalinowski, Stefan
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Hoffmann, Axel
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Reitzenstein, Stephan
Date Issued
2016
Publisher
Publisher place
New York
Published in
2016 International Semiconductor Laser Conference (Islc)
ISBN of the book
978-4-8855-2306-9
Total of pages
2
Series title/Series vol.
IEEE International Semiconductor Laser Conference
Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
| Event name | Event place | Event date |
Kobe, JAPAN | SEP 12-15, 2016 | |
Available on Infoscience
February 17, 2017
Use this identifier to reference this record