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  4. Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
 
conference paper

Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon

Jagsch, Stefan Thomas
•
Trivino, Noelia Vico  
•
Callsen, Gordon  
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2016
2016 International Semiconductor Laser Conference (Islc)
25th International Semiconductor Laser Conference (ISLC)

We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.

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