conference paper
Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
2016
2016 International Semiconductor Laser Conference (Islc)
We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.
Type
conference paper
Web of Science ID
WOS:000392249800024
Author(s)
Jagsch, Stefan Thomas
Kalinowski, Stefan
Hoffmann, Axel
Reitzenstein, Stephan
Date Issued
2016
Publisher
Publisher place
New York
Published in
2016 International Semiconductor Laser Conference (Islc)
ISBN of the book
978-4-8855-2306-9
Total of pages
2
Series title/Series vol.
IEEE International Semiconductor Laser Conference
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
| Event name | Event place | Event date |
Kobe, JAPAN | SEP 12-15, 2016 | |
Available on Infoscience
February 17, 2017
Use this identifier to reference this record