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  4. Field-effect-based chemical sensing using nanowire-nanoparticle hybrids: The ion-sensitive metal-semiconductor field-effect transistor
 
research article

Field-effect-based chemical sensing using nanowire-nanoparticle hybrids: The ion-sensitive metal-semiconductor field-effect transistor

Pachauri, Vivek
•
Kern, Klaus  
•
Balasubramanian, Kannan
2013
Applied Physics Letters

A new class of nanoscale devices called ion-sensitive metal-semiconductor field-effect transistors (nano-IS-MESFET) for sensing applications is reported. Nanoparticle-nanowire hybrids with active metal-semiconductor regions are operated as ion-sensitive field-effect transistors (ISFETs) in liquids, where 0D metal gates induce quasi-spherical charge depletion regions in 1D transport channel producing stronger field-effects. As a proof-of-concept, we present ZnO nanowire-Pd/Au nanoparticle IS-MESFETs that show increased transconductance in comparison to ZnO nanowire ISFETs. As demonstrated further, ISMESFETs may also provide strategies for site-specific immobilization of receptor molecules paving way towards a novel electrical biosensing platform operable at low voltages with improved selectivity and sensitivity. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775579]

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Type
research article
DOI
10.1063/1.4775579
Web of Science ID

WOS:000313670200096

Author(s)
Pachauri, Vivek
Kern, Klaus  
Balasubramanian, Kannan
Date Issued

2013

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

102

Issue

2

Article Number

023501

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSEN  
Available on Infoscience
March 28, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/90892
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