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research article

Interferometric measurement of the elongation of a pulsed diode laser

Keller, R.
•
Salathe, R.
•
Tschudi, T.
1972
IEEE Journal of Quantum Electronics

An interferometric technique was developed for detecting fast displacements of small areas in beam direction by less than λ/8. It utilizes a modified Michelson interferometer and a He-Ne laser light source. The technique was applied to measure the temporal and spatial evolution of the thermal mirror deformation of a GaAs-Ga1-xAlxAs single heterostructure laser diode. A small spot on the facet of the laser diode formed one mirror of the interferometer. The other mirror was moved linearly with time by applying a ramp voltage to a piezoelectric transducer. The diode was pulsed during this motion. The local elongation of the laser diode was evaluated from the interferometer output signal. The measured elongation of the active region at a time 1 μs after a 150-ns pulse with current density 48000 A/cm2 was between 4 and 20 nm, indicating a temperature rise of 2-11°C. The smallest elongations detected were in the range of 0.5-1 nm. The measured values are in substantial agreement with theoretical expectations for thermal model calculations

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Type
research article
DOI
10.1109/JQE.1972.1076861
Author(s)
Keller, R.
Salathe, R.
Tschudi, T.
Date Issued

1972

Published in
IEEE Journal of Quantum Electronics
Volume

QE-8

Issue

10

Start page

783

End page

7

Subjects

gallium arsenide

•

light interference

•

semiconductor lasers

•

interferometric measurement

•

elongation

•

pulse diode laser

•

fast displacements of small areas

•

Michelson interferometer

•

thermal mirror deformation

•

He-Ne laser light source

•

GaAs-Ga1-xAlxAs single heterostructure laser diode

•

0.5 to 1 nm

Note

Univ. Berne, Switzerland

453094

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

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Available on Infoscience
January 20, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/33899
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