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research article

Geometry influence on the Hall effect devices performance

Paun, M.-A.  
•
Sallese, Jean-Michel  
•
Kayal, M.  
2010
UPB Scientific Bulletin, Series A: Applied Mathematics and Physics

The influence of the geometry, via the ratio L/W of the Hall cells and the geometrical correction factor G on several figures of merit regarding Hall sensors is analyzed, namely the sensitivity, Hall Voltage and power dissipated within the device. Experimental values for the parameters of interest are given for eight different geometries integrated in CMOS technology using certain biasing currents. We discuss how these results compare with an analytical model and we propose a global optimization analysis for guiding the designer in best Hall cell dimensions selection.

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Type
research article
Web of Science ID

WOS:000286087500024

Author(s)
Paun, M.-A.  
•
Sallese, Jean-Michel  
•
Kayal, M.  
Date Issued

2010

Published in
UPB Scientific Bulletin, Series A: Applied Mathematics and Physics
Volume

72

Issue

4

Start page

257

End page

271

Subjects

Geometrical correction factor

•

Hall effect sensors

•

Hall Voltage

•

Power dissipated

•

Hall Sensitivity

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ELAB  
EDLAB  
Available on Infoscience
December 22, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/62447
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