conference paper
Molecular beam epitaxial growth of GaAs on Si
1987
1st International Electronics Conference of the Society for the Advancement of Material and Process Engineering
Type
conference paper
Author(s)
Date Issued
1987
Publisher
Published in
1st International Electronics Conference of the Society for the Advancement of Material and Process Engineering
Start page
750
Note
invited communication
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
August 31, 2007
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