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2018
Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
patent
A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.
Type
patent
EPO Family ID
60911088
Author(s)
TTO classification
TTO:6.1609
DOI | Country code | Kind code | Date issued |
US2018012659 | US | A1 | 2018-01-11 |
Available on Infoscience
December 5, 2019
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