Post-cmos processing and 3d integration based on dry-film lithography
A method for performing a post processing pattern on a diced chip having a foot-print, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern.
49253366
TTO:6.1216
Patent number | Country code | Kind code | Date issued |
US9412728 | US | B2 | 2016-08-09 |
US2015371978 | US | A1 | 2015-12-24 |
WO2014020479 | WO | A3 | 2014-04-10 |
WO2014020479 | WO | A2 | 2014-02-06 |