patent
Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices
Buehlmann, Hans-joerg
•
Dorsaz, Julien
•
Carlin, Jean-francois
2007
A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide region.
Type
patent
EPO Family ID
36602113
Author(s)
Buehlmann, Hans-joerg
Dorsaz, Julien
Carlin, Jean-francois
Note
Alternative title(s) : (fr) Oxydation selective et gravure selective de couches de allnn pour fabrication de dispositifs semi-conducteurs au nitrure du groupe iii
TTO classification
TTO:6.0532
EPFL units
| Identifier | Country code | Kind code | Date issued |
WO2006066962 | WO | A3 | 2007-03-29 |
WO2006066962 | WO | A2 | 2006-06-29 |
Available on Infoscience
June 13, 2017
Use this identifier to reference this record