The present invention relates to a method for straining a two-dimensional layer of solid material (5) in a nanoelectronic device. the method comprises the steps of providing a substrate; adding a thin film onto the substrate to be in direct contact with the substrate (4), or onto one of one or more first interlayers placed on the substrate (4) to be in indirect contact with the substrate (4); patterning the thin film; and adding, through a high-temperature process, a two-dimensional layer of solid material onto the patterned thin film (3) to be in direct contact with the patterned thin film (3), or onto one of one or more second interlayers placed on the patterned thin film (3) to be in indirect contact with the patterned thin film (3).