Measurement of the effective transverse piezoelectric coefficient e(31,f) of AlN and Pb(Zr-x,Ti1-x)O-3 thin films
The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of a Si cantilever coated with a piezoelectric material. The maximum value was obtained from a tetragonal composition of PZT (45/55 Zr/Ti ratio) and was equal to 8.3 C/m(2). The ALN layer exhibited 97% of the theoretical value calculated from single crystal data, i.e., e(31,f)- = 1.02 C/m(2) (C) 1999 Elsevier Science S.A. All rights reserved.
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Dubois, M. A., & Muralt, P. (1999). Measurement of the effective transverse piezoelectric coefficient e(31,f) of AlN and Pb(Zr-x,Ti1-x)O-3 thin films. Sensors and Actuators A: Physical, 77(2), 106–112. https://doi.org/10.1016/S0924-4247(99)00070-9
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WOS:000083668400003
1999
77
2
106
112
Dubois, Ma Swiss Fed Inst Technol, Lab Ceram, DMX LC Ecublens, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, DMX LC Ecublens, CH-1015 Lausanne, Switzerland
255KQ
Cited References Count:17
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