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Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain
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Uni-directional GaN-on-Si MOSHEMTs with high rever[...]
-
Ma, Jun
et al
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Correct_ISPSD
version 1
Correct_ISPSD.pdf
[381.52 KB]
19 Feb 2019, 16:03