n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 x 10(-4) Omega.cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n(+)-GaN/2 dimensional electron gas contact resistivity of 0.11 Omega.mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices. (C) 2014 AIP Publishing LLC.
Cite this item
Lugani, L., Malinverni, M., Tirelli, S., Marti, D., Giraud, E., Carlin, J.-F., Bolognesi, C. R., & Grandjean, N. (2014). n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts. Applied Physics Letters, 105(20), Article 202113. https://doi.org/10.1063/1.4902347
Click Copy to copy the citation, or select the text manually.
WOS:000345513300041
2014
105
20
202113
REVIEWED
EPFL